| Ian Watson is a Research Team Leader at the Institute of Photonics, where he has worked since 1998. His group’s research is focused around metal organic vapour deposition (MOCVD) of semiconductors from the gallium nitride family, although Ian contributes to a variety of other materials-based projects within the Institute on subjects such as diamond processing. Topics of interest in III-nitride growth include novel substrates and templates, vertical resonant cavity structures, in situ growth monitoring, growth of InGaN quantum dots, applications of AlInN alloy layers, and energy transfer from InGaN quantum wells. Much of this research involves close interactions with Strathclyde colleagues contributing to material processing and characterisation. There are also numerous collaborations with external laboratories, in some cases formalised within consortium projects. For an up to date summary of research achievements, please follow the link to view publications.
Ian has held four previous positions working on different aspects of MOCVD. Immediately before moving to Strathclyde, he worked for 2 ½ years as a Principal Engineer at EEV Ltd (now E2V Technologies) in an industrial group producing high-performance solar cells for space applications. Prior to this he held postdoctoral appointments in London University, where he worked on single-source MOCVD routes to II-VI semiconductors, and at Cambridge University, where he researched deposition of oxide superconductor films. Ian’s PhD studies, completed in 1989, were at the University of Kent, where he researched novel MOCVD processes using transition metal carbonyl compounds. Ian’s first degree was taken in Natural Sciences at Cambridge University, and before starting his PhD he worked for 2 years at Plessey’s corporate research laboratory in Caswell, Northamptonshire, on sol-gel processing of ferroelectric metal oxides.
Ian was Guest Editor for the proceedings of the Physics of Light-Matter Coupling 5 meeting held in Glasgow in June 2005.
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